| /* |
| * $Id: mtd-abi.h,v 1.7 2004/11/23 15:37:32 gleixner Exp $ |
| * |
| * Portions of MTD ABI definition which are shared by kernel and user space |
| */ |
| |
| #ifndef __MTD_ABI_H__ |
| #define __MTD_ABI_H__ |
| |
| struct erase_info_user { |
| uint32_t start; |
| uint32_t length; |
| }; |
| |
| struct mtd_oob_buf { |
| uint32_t start; |
| uint32_t length; |
| unsigned char *ptr; |
| }; |
| |
| #define MTD_ABSENT 0 |
| #define MTD_RAM 1 |
| #define MTD_ROM 2 |
| #define MTD_NORFLASH 3 |
| #define MTD_NANDFLASH 4 |
| #define MTD_PEROM 5 |
| #define MTD_OTHER 14 |
| #define MTD_UNKNOWN 15 |
| |
| #define MTD_CLEAR_BITS 1 // Bits can be cleared (flash) |
| #define MTD_SET_BITS 2 // Bits can be set |
| #define MTD_ERASEABLE 4 // Has an erase function |
| #define MTD_WRITEB_WRITEABLE 8 // Direct IO is possible |
| #define MTD_VOLATILE 16 // Set for RAMs |
| #define MTD_XIP 32 // eXecute-In-Place possible |
| #define MTD_OOB 64 // Out-of-band data (NAND flash) |
| #define MTD_ECC 128 // Device capable of automatic ECC |
| #define MTD_NO_VIRTBLOCKS 256 // Virtual blocks not allowed |
| |
| // Some common devices / combinations of capabilities |
| #define MTD_CAP_ROM 0 |
| #define MTD_CAP_RAM (MTD_CLEAR_BITS|MTD_SET_BITS|MTD_WRITEB_WRITEABLE) |
| #define MTD_CAP_NORFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE) |
| #define MTD_CAP_NANDFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE|MTD_OOB) |
| #define MTD_WRITEABLE (MTD_CLEAR_BITS|MTD_SET_BITS) |
| |
| |
| // Types of automatic ECC/Checksum available |
| #define MTD_ECC_NONE 0 // No automatic ECC available |
| #define MTD_ECC_RS_DiskOnChip 1 // Automatic ECC on DiskOnChip |
| #define MTD_ECC_SW 2 // SW ECC for Toshiba & Samsung devices |
| |
| /* ECC byte placement */ |
| #define MTD_NANDECC_OFF 0 // Switch off ECC (Not recommended) |
| #define MTD_NANDECC_PLACE 1 // Use the given placement in the structure (YAFFS1 legacy mode) |
| #define MTD_NANDECC_AUTOPLACE 2 // Use the default placement scheme |
| #define MTD_NANDECC_PLACEONLY 3 // Use the given placement in the structure (Do not store ecc result on read) |
| #define MTD_NANDECC_AUTOPL_USR 4 // Use the given autoplacement scheme rather than using the default |
| |
| struct mtd_info_user { |
| uint8_t type; |
| uint32_t flags; |
| uint32_t size; // Total size of the MTD |
| uint32_t erasesize; |
| uint32_t oobblock; // Size of OOB blocks (e.g. 512) |
| uint32_t oobsize; // Amount of OOB data per block (e.g. 16) |
| uint32_t ecctype; |
| uint32_t eccsize; |
| }; |
| |
| struct region_info_user { |
| uint32_t offset; /* At which this region starts, |
| * from the beginning of the MTD */ |
| uint32_t erasesize; /* For this region */ |
| uint32_t numblocks; /* Number of blocks in this region */ |
| uint32_t regionindex; |
| }; |
| |
| #define MEMGETINFO _IOR('M', 1, struct mtd_info_user) |
| #define MEMERASE _IOW('M', 2, struct erase_info_user) |
| #define MEMWRITEOOB _IOWR('M', 3, struct mtd_oob_buf) |
| #define MEMREADOOB _IOWR('M', 4, struct mtd_oob_buf) |
| #define MEMLOCK _IOW('M', 5, struct erase_info_user) |
| #define MEMUNLOCK _IOW('M', 6, struct erase_info_user) |
| #define MEMGETREGIONCOUNT _IOR('M', 7, int) |
| #define MEMGETREGIONINFO _IOWR('M', 8, struct region_info_user) |
| #define MEMSETOOBSEL _IOW('M', 9, struct nand_oobinfo) |
| #define MEMGETOOBSEL _IOR('M', 10, struct nand_oobinfo) |
| #define MEMGETBADBLOCK _IOW('M', 11, loff_t) |
| #define MEMSETBADBLOCK _IOW('M', 12, loff_t) |
| |
| struct nand_oobinfo { |
| uint32_t useecc; |
| uint32_t eccbytes; |
| uint32_t oobfree[8][2]; |
| uint32_t eccpos[32]; |
| }; |
| |
| #endif /* __MTD_ABI_H__ */ |