plat/marvell/a8k: add Globalscale Mochabin support
Add support for Globalscale MOCHAbin board.
Its based on Armada 7040 SoC and ships in multiple DRAM options:
* 2GB DDR4 (1CS)
* 4GB DDR4 (1CS)
* 8GB DDR4 (2CS)
Since it ships in multiple DRAM configurations, an
Armada 3k style DDR_TOPOLOGY variable is added.
Currently, this only has effect on the MOCHAbin, but
I expect more boards with multiple DRAM sizes to be
supported.
Signed-off-by: Robert Marko <robert.marko@sartura.hr>
Change-Id: I8a1ec9268fed34f6a81c5cbf1e891f638d461305
diff --git a/plat/marvell/armada/a8k/a70x0_mochabin/board/dram_port.c b/plat/marvell/armada/a8k/a70x0_mochabin/board/dram_port.c
new file mode 100644
index 0000000..68d335b
--- /dev/null
+++ b/plat/marvell/armada/a8k/a70x0_mochabin/board/dram_port.c
@@ -0,0 +1,227 @@
+/*
+ * Copyright (C) 2021 Sartura Ltd.
+ * Copyright (C) 2021 Globalscale technologies, Inc.
+ * Copyright (C) 2021 Marvell International Ltd.
+ *
+ * SPDX-License-Identifier: BSD-3-Clause
+ * https://spdx.org/licenses
+ */
+
+#include <arch_helpers.h>
+#include <common/debug.h>
+
+#include <mv_ddr_if.h>
+#include <plat_marvell.h>
+
+/*
+ * This function may modify the default DRAM parameters
+ * based on information received from SPD or bootloader
+ * configuration located on non volatile storage
+ */
+void plat_marvell_dram_update_topology(void)
+{
+}
+
+/*
+ * This struct provides the DRAM training code with
+ * the appropriate board DRAM configuration
+ */
+#if DDR_TOPOLOGY == 0
+static struct mv_ddr_topology_map board_topology_map_2g = {
+/* 1CS 4Gb x4 devices of Samsung K4A4G085WF */
+ DEBUG_LEVEL_ERROR,
+ 0x1, /* active interfaces */
+ /* cs_mask, mirror, dqs_swap, ck_swap X subphys */
+ { { { {0x1, 0x2, 0, 0},
+ {0x1, 0x2, 0, 0},
+ {0x1, 0x2, 0, 0},
+ {0x1, 0x2, 0, 0},
+ {0x1, 0x2, 0, 0},
+ {0x1, 0x2, 0, 0},
+ {0x1, 0x2, 0, 0},
+ {0x1, 0x2, 0, 0},
+ {0x1, 0x2, 0, 0} },
+ SPEED_BIN_DDR_2400R, /* speed_bin */
+ MV_DDR_DEV_WIDTH_8BIT, /* sdram device width */
+ MV_DDR_DIE_CAP_4GBIT, /* die capacity */
+ MV_DDR_FREQ_SAR, /* frequency */
+ 0, 0, /* cas_l, cas_wl */
+ MV_DDR_TEMP_LOW} }, /* temperature */
+ BUS_MASK_32BIT, /* subphys mask */
+ MV_DDR_CFG_DEFAULT, /* ddr configuration data source */
+ NOT_COMBINED, /* ddr twin-die combined*/
+ { {0} }, /* raw spd data */
+ {0}, /* timing parameters */
+ { /* electrical configuration */
+ { /* memory electrical configuration */
+ MV_DDR_RTT_NOM_PARK_RZQ_DISABLE, /* rtt_nom */
+ {
+ MV_DDR_RTT_NOM_PARK_RZQ_DIV4, /* rtt_park 1cs */
+ MV_DDR_RTT_NOM_PARK_RZQ_DIV1 /* rtt_park 2cs */
+ },
+ {
+ MV_DDR_RTT_WR_DYN_ODT_OFF, /* rtt_wr 1cs */
+ MV_DDR_RTT_WR_RZQ_DIV2 /* rtt_wr 2cs */
+ },
+ MV_DDR_DIC_RZQ_DIV7 /* dic */
+ },
+ { /* phy electrical configuration */
+ MV_DDR_OHM_30, /* data_drv_p */
+ MV_DDR_OHM_30, /* data_drv_n */
+ MV_DDR_OHM_30, /* ctrl_drv_p */
+ MV_DDR_OHM_30, /* ctrl_drv_n */
+ {
+ MV_DDR_OHM_60, /* odt_p 1cs */
+ MV_DDR_OHM_120 /* odt_p 2cs */
+ },
+ {
+ MV_DDR_OHM_60, /* odt_n 1cs */
+ MV_DDR_OHM_120 /* odt_n 2cs */
+ },
+ },
+ { /* mac electrical configuration */
+ MV_DDR_ODT_CFG_NORMAL, /* odtcfg_pattern */
+ MV_DDR_ODT_CFG_ALWAYS_ON, /* odtcfg_write */
+ MV_DDR_ODT_CFG_NORMAL, /* odtcfg_read */
+ },
+ }
+};
+#endif
+
+#if DDR_TOPOLOGY == 1
+static struct mv_ddr_topology_map board_topology_map_4g = {
+/* 1CS 8Gb x4 devices of Samsung K4A8G085WC-BCTD */
+ DEBUG_LEVEL_ERROR,
+ 0x1, /* active interfaces */
+ /* cs_mask, mirror, dqs_swap, ck_swap X subphys */
+ { { { {0x1, 0x2, 0, 0},
+ {0x1, 0x2, 0, 0},
+ {0x1, 0x2, 0, 0},
+ {0x1, 0x2, 0, 0},
+ {0x1, 0x2, 0, 0},
+ {0x1, 0x2, 0, 0},
+ {0x1, 0x2, 0, 0},
+ {0x1, 0x2, 0, 0},
+ {0x1, 0x2, 0, 0} },
+ SPEED_BIN_DDR_2400R, /* speed_bin */
+ MV_DDR_DEV_WIDTH_8BIT, /* sdram device width */
+ MV_DDR_DIE_CAP_8GBIT, /* die capacity */
+ MV_DDR_FREQ_SAR, /* frequency */
+ 0, 0, /* cas_l, cas_wl */
+ MV_DDR_TEMP_LOW} }, /* temperature */
+ BUS_MASK_32BIT, /* subphys mask */
+ MV_DDR_CFG_DEFAULT, /* ddr configuration data source */
+ NOT_COMBINED, /* ddr twin-die combined*/
+ { {0} }, /* raw spd data */
+ {0}, /* timing parameters */
+ { /* electrical configuration */
+ { /* memory electrical configuration */
+ MV_DDR_RTT_NOM_PARK_RZQ_DISABLE, /* rtt_nom */
+ {
+ MV_DDR_RTT_NOM_PARK_RZQ_DIV4, /* rtt_park 1cs */
+ MV_DDR_RTT_NOM_PARK_RZQ_DIV1 /* rtt_park 2cs */
+ },
+ {
+ MV_DDR_RTT_WR_DYN_ODT_OFF, /* rtt_wr 1cs */
+ MV_DDR_RTT_WR_RZQ_DIV2 /* rtt_wr 2cs */
+ },
+ MV_DDR_DIC_RZQ_DIV7 /* dic */
+ },
+ { /* phy electrical configuration */
+ MV_DDR_OHM_30, /* data_drv_p */
+ MV_DDR_OHM_30, /* data_drv_n */
+ MV_DDR_OHM_30, /* ctrl_drv_p */
+ MV_DDR_OHM_30, /* ctrl_drv_n */
+ {
+ MV_DDR_OHM_60, /* odt_p 1cs */
+ MV_DDR_OHM_120 /* odt_p 2cs */
+ },
+ {
+ MV_DDR_OHM_60, /* odt_n 1cs */
+ MV_DDR_OHM_120 /* odt_n 2cs */
+ },
+ },
+ { /* mac electrical configuration */
+ MV_DDR_ODT_CFG_NORMAL, /* odtcfg_pattern */
+ MV_DDR_ODT_CFG_ALWAYS_ON, /* odtcfg_write */
+ MV_DDR_ODT_CFG_NORMAL, /* odtcfg_read */
+ },
+ }
+};
+#endif
+
+#if DDR_TOPOLOGY == 2
+static struct mv_ddr_topology_map board_topology_map_8g = {
+/* 2CS 8Gb x8 devices of Micron MT40A1G8WE-083E IT */
+ DEBUG_LEVEL_ERROR,
+ 0x1, /* active interfaces */
+ /* cs_mask, mirror, dqs_swap, ck_swap X subphys */
+ { { { {0x3, 0x2, 0, 0},
+ {0x3, 0x2, 0, 0},
+ {0x3, 0x2, 0, 0},
+ {0x3, 0x2, 0, 0},
+ {0x3, 0x2, 0, 0},
+ {0x3, 0x2, 0, 0},
+ {0x3, 0x2, 0, 0},
+ {0x3, 0x2, 0, 0},
+ {0x3, 0x2, 0, 0} },
+ SPEED_BIN_DDR_2400R, /* speed_bin */
+ MV_DDR_DEV_WIDTH_8BIT, /* sdram device width */
+ MV_DDR_DIE_CAP_8GBIT, /* die capacity */
+ MV_DDR_FREQ_SAR, /* frequency */
+ 0, 0, /* cas_l, cas_wl */
+ MV_DDR_TEMP_LOW} }, /* temperature */
+ BUS_MASK_32BIT, /* subphys mask */
+ MV_DDR_CFG_DEFAULT, /* ddr configuration data source */
+ NOT_COMBINED, /* ddr twin-die combined*/
+ { {0} }, /* raw spd data */
+ {0}, /* timing parameters */
+ { /* electrical configuration */
+ { /* memory electrical configuration */
+ MV_DDR_RTT_NOM_PARK_RZQ_DISABLE, /* rtt_nom */
+ {
+ MV_DDR_RTT_NOM_PARK_RZQ_DIV4, /* rtt_park 1cs */
+ MV_DDR_RTT_NOM_PARK_RZQ_DIV1 /* rtt_park 2cs */
+ },
+ {
+ MV_DDR_RTT_WR_DYN_ODT_OFF, /* rtt_wr 1cs */
+ MV_DDR_RTT_WR_RZQ_DIV2 /* rtt_wr 2cs */
+ },
+ MV_DDR_DIC_RZQ_DIV7 /* dic */
+ },
+ { /* phy electrical configuration */
+ MV_DDR_OHM_30, /* data_drv_p */
+ MV_DDR_OHM_30, /* data_drv_n */
+ MV_DDR_OHM_30, /* ctrl_drv_p */
+ MV_DDR_OHM_30, /* ctrl_drv_n */
+ {
+ MV_DDR_OHM_60, /* odt_p 1cs */
+ MV_DDR_OHM_120 /* odt_p 2cs */
+ },
+ {
+ MV_DDR_OHM_60, /* odt_n 1cs */
+ MV_DDR_OHM_120 /* odt_n 2cs */
+ },
+ },
+ { /* mac electrical configuration */
+ MV_DDR_ODT_CFG_NORMAL, /* odtcfg_pattern */
+ MV_DDR_ODT_CFG_ALWAYS_ON, /* odtcfg_write */
+ MV_DDR_ODT_CFG_NORMAL, /* odtcfg_read */
+ },
+ }
+};
+#endif
+
+struct mv_ddr_topology_map *mv_ddr_topology_map_get(void)
+{
+/* a70x0_mochabin board supports 3 DDR4 models (2G/1CS, 4G/1CS, 8G/2CS) */
+#if DDR_TOPOLOGY == 0
+ return &board_topology_map_2g;
+#elif DDR_TOPOLOGY == 1
+ return &board_topology_map_4g;
+#elif DDR_TOPOLOGY == 2
+ return &board_topology_map_8g;
+#else
+ #error "Unknown DDR topology"
+#endif
+}