diff --git a/plat/marvell/armada/a8k/a70x0_mochabin/board/dram_port.c b/plat/marvell/armada/a8k/a70x0_mochabin/board/dram_port.c
new file mode 100644
index 0000000..68d335b
--- /dev/null
+++ b/plat/marvell/armada/a8k/a70x0_mochabin/board/dram_port.c
@@ -0,0 +1,227 @@
+/*
+ * Copyright (C) 2021 Sartura Ltd.
+ * Copyright (C) 2021 Globalscale technologies, Inc.
+ * Copyright (C) 2021 Marvell International Ltd.
+ *
+ * SPDX-License-Identifier:     BSD-3-Clause
+ * https://spdx.org/licenses
+ */
+
+#include <arch_helpers.h>
+#include <common/debug.h>
+
+#include <mv_ddr_if.h>
+#include <plat_marvell.h>
+
+/*
+ * This function may modify the default DRAM parameters
+ * based on information received from SPD or bootloader
+ * configuration located on non volatile storage
+ */
+void plat_marvell_dram_update_topology(void)
+{
+}
+
+/*
+ * This struct provides the DRAM training code with
+ * the appropriate board DRAM configuration
+ */
+#if DDR_TOPOLOGY == 0
+static struct mv_ddr_topology_map board_topology_map_2g = {
+/* 1CS 4Gb x4 devices of Samsung K4A4G085WF */
+	DEBUG_LEVEL_ERROR,
+	0x1, /* active interfaces */
+	/* cs_mask, mirror, dqs_swap, ck_swap X subphys */
+	{ { { {0x1, 0x2, 0, 0},
+	      {0x1, 0x2, 0, 0},
+	      {0x1, 0x2, 0, 0},
+	      {0x1, 0x2, 0, 0},
+	      {0x1, 0x2, 0, 0},
+	      {0x1, 0x2, 0, 0},
+	      {0x1, 0x2, 0, 0},
+	      {0x1, 0x2, 0, 0},
+	      {0x1, 0x2, 0, 0} },
+	   SPEED_BIN_DDR_2400R,		/* speed_bin */
+	   MV_DDR_DEV_WIDTH_8BIT,	/* sdram device width */
+	   MV_DDR_DIE_CAP_4GBIT,	/* die capacity */
+	   MV_DDR_FREQ_SAR,		/* frequency */
+	   0, 0,			/* cas_l, cas_wl */
+	   MV_DDR_TEMP_LOW} },		/* temperature */
+	BUS_MASK_32BIT,	/* subphys mask */
+	MV_DDR_CFG_DEFAULT,		/* ddr configuration data source */
+	NOT_COMBINED,			/* ddr twin-die combined*/
+	{ {0} },			/* raw spd data */
+	{0},				/* timing parameters */
+	{				/* electrical configuration */
+		{			/* memory electrical configuration */
+			MV_DDR_RTT_NOM_PARK_RZQ_DISABLE,	/* rtt_nom */
+			{
+				MV_DDR_RTT_NOM_PARK_RZQ_DIV4, /* rtt_park 1cs */
+				MV_DDR_RTT_NOM_PARK_RZQ_DIV1  /* rtt_park 2cs */
+			},
+			{
+				MV_DDR_RTT_WR_DYN_ODT_OFF,	/* rtt_wr 1cs */
+				MV_DDR_RTT_WR_RZQ_DIV2		/* rtt_wr 2cs */
+			},
+			MV_DDR_DIC_RZQ_DIV7	/* dic */
+		},
+		{			/* phy electrical configuration */
+			MV_DDR_OHM_30,	/* data_drv_p */
+			MV_DDR_OHM_30,	/* data_drv_n */
+			MV_DDR_OHM_30,	/* ctrl_drv_p */
+			MV_DDR_OHM_30,	/* ctrl_drv_n */
+			{
+				MV_DDR_OHM_60,	/* odt_p 1cs */
+				MV_DDR_OHM_120	/* odt_p 2cs */
+			},
+			{
+				MV_DDR_OHM_60,	/* odt_n 1cs */
+				MV_DDR_OHM_120	/* odt_n 2cs */
+			},
+		},
+		{			/* mac electrical configuration */
+			MV_DDR_ODT_CFG_NORMAL,		/* odtcfg_pattern */
+			MV_DDR_ODT_CFG_ALWAYS_ON,	/* odtcfg_write */
+			MV_DDR_ODT_CFG_NORMAL,		/* odtcfg_read */
+		},
+	}
+};
+#endif
+
+#if DDR_TOPOLOGY == 1
+static struct mv_ddr_topology_map board_topology_map_4g = {
+/* 1CS 8Gb x4 devices of Samsung K4A8G085WC-BCTD */
+	DEBUG_LEVEL_ERROR,
+	0x1, /* active interfaces */
+	/* cs_mask, mirror, dqs_swap, ck_swap X subphys */
+	{ { { {0x1, 0x2, 0, 0},
+	      {0x1, 0x2, 0, 0},
+	      {0x1, 0x2, 0, 0},
+	      {0x1, 0x2, 0, 0},
+	      {0x1, 0x2, 0, 0},
+	      {0x1, 0x2, 0, 0},
+	      {0x1, 0x2, 0, 0},
+	      {0x1, 0x2, 0, 0},
+	      {0x1, 0x2, 0, 0} },
+	   SPEED_BIN_DDR_2400R,		/* speed_bin */
+	   MV_DDR_DEV_WIDTH_8BIT,	/* sdram device width */
+	   MV_DDR_DIE_CAP_8GBIT,	/* die capacity */
+	   MV_DDR_FREQ_SAR,		/* frequency */
+	   0, 0,			/* cas_l, cas_wl */
+	   MV_DDR_TEMP_LOW} },		/* temperature */
+	BUS_MASK_32BIT,	/* subphys mask */
+	MV_DDR_CFG_DEFAULT,		/* ddr configuration data source */
+	NOT_COMBINED,			/* ddr twin-die combined*/
+	{ {0} },			/* raw spd data */
+	{0},				/* timing parameters */
+	{				/* electrical configuration */
+		{			/* memory electrical configuration */
+			MV_DDR_RTT_NOM_PARK_RZQ_DISABLE,	/* rtt_nom */
+			{
+				MV_DDR_RTT_NOM_PARK_RZQ_DIV4, /* rtt_park 1cs */
+				MV_DDR_RTT_NOM_PARK_RZQ_DIV1  /* rtt_park 2cs */
+			},
+			{
+				MV_DDR_RTT_WR_DYN_ODT_OFF,	/* rtt_wr 1cs */
+				MV_DDR_RTT_WR_RZQ_DIV2		/* rtt_wr 2cs */
+			},
+			MV_DDR_DIC_RZQ_DIV7	/* dic */
+		},
+		{			/* phy electrical configuration */
+			MV_DDR_OHM_30,	/* data_drv_p */
+			MV_DDR_OHM_30,	/* data_drv_n */
+			MV_DDR_OHM_30,	/* ctrl_drv_p */
+			MV_DDR_OHM_30,	/* ctrl_drv_n */
+			{
+				MV_DDR_OHM_60,	/* odt_p 1cs */
+				MV_DDR_OHM_120	/* odt_p 2cs */
+			},
+			{
+				MV_DDR_OHM_60,	/* odt_n 1cs */
+				MV_DDR_OHM_120	/* odt_n 2cs */
+			},
+		},
+		{			/* mac electrical configuration */
+			MV_DDR_ODT_CFG_NORMAL,		/* odtcfg_pattern */
+			MV_DDR_ODT_CFG_ALWAYS_ON,	/* odtcfg_write */
+			MV_DDR_ODT_CFG_NORMAL,		/* odtcfg_read */
+		},
+	}
+};
+#endif
+
+#if DDR_TOPOLOGY == 2
+static struct mv_ddr_topology_map board_topology_map_8g = {
+/* 2CS 8Gb x8 devices of Micron MT40A1G8WE-083E IT */
+	DEBUG_LEVEL_ERROR,
+	0x1, /* active interfaces */
+	/* cs_mask, mirror, dqs_swap, ck_swap X subphys */
+	{ { { {0x3, 0x2, 0, 0},
+	      {0x3, 0x2, 0, 0},
+	      {0x3, 0x2, 0, 0},
+	      {0x3, 0x2, 0, 0},
+	      {0x3, 0x2, 0, 0},
+	      {0x3, 0x2, 0, 0},
+	      {0x3, 0x2, 0, 0},
+	      {0x3, 0x2, 0, 0},
+	      {0x3, 0x2, 0, 0} },
+	   SPEED_BIN_DDR_2400R,		/* speed_bin */
+	   MV_DDR_DEV_WIDTH_8BIT,	/* sdram device width */
+	   MV_DDR_DIE_CAP_8GBIT,	/* die capacity */
+	   MV_DDR_FREQ_SAR,		/* frequency */
+	   0, 0,			/* cas_l, cas_wl */
+	   MV_DDR_TEMP_LOW} },		/* temperature */
+	BUS_MASK_32BIT,	/* subphys mask */
+	MV_DDR_CFG_DEFAULT,		/* ddr configuration data source */
+	NOT_COMBINED,			/* ddr twin-die combined*/
+	{ {0} },			/* raw spd data */
+	{0},				/* timing parameters */
+	{				/* electrical configuration */
+		{			/* memory electrical configuration */
+			MV_DDR_RTT_NOM_PARK_RZQ_DISABLE,	/* rtt_nom */
+			{
+				MV_DDR_RTT_NOM_PARK_RZQ_DIV4, /* rtt_park 1cs */
+				MV_DDR_RTT_NOM_PARK_RZQ_DIV1  /* rtt_park 2cs */
+			},
+			{
+				MV_DDR_RTT_WR_DYN_ODT_OFF,	/* rtt_wr 1cs */
+				MV_DDR_RTT_WR_RZQ_DIV2		/* rtt_wr 2cs */
+			},
+			MV_DDR_DIC_RZQ_DIV7	/* dic */
+		},
+		{			/* phy electrical configuration */
+			MV_DDR_OHM_30,	/* data_drv_p */
+			MV_DDR_OHM_30,	/* data_drv_n */
+			MV_DDR_OHM_30,	/* ctrl_drv_p */
+			MV_DDR_OHM_30,	/* ctrl_drv_n */
+			{
+				MV_DDR_OHM_60,	/* odt_p 1cs */
+				MV_DDR_OHM_120	/* odt_p 2cs */
+			},
+			{
+				MV_DDR_OHM_60,	/* odt_n 1cs */
+				MV_DDR_OHM_120	/* odt_n 2cs */
+			},
+		},
+		{			/* mac electrical configuration */
+			MV_DDR_ODT_CFG_NORMAL,		/* odtcfg_pattern */
+			MV_DDR_ODT_CFG_ALWAYS_ON,	/* odtcfg_write */
+			MV_DDR_ODT_CFG_NORMAL,		/* odtcfg_read */
+		},
+	}
+};
+#endif
+
+struct mv_ddr_topology_map *mv_ddr_topology_map_get(void)
+{
+/* a70x0_mochabin board supports 3 DDR4 models (2G/1CS, 4G/1CS, 8G/2CS) */
+#if DDR_TOPOLOGY == 0
+	return &board_topology_map_2g;
+#elif DDR_TOPOLOGY == 1
+	return &board_topology_map_4g;
+#elif DDR_TOPOLOGY == 2
+	return &board_topology_map_8g;
+#else
+	#error "Unknown DDR topology"
+#endif
+}