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Tom Rini10e47792018-05-06 17:58:06 -04001/* SPDX-License-Identifier: GPL-2.0 */
James Yang5b4da322008-08-26 15:01:27 -05002/*
York Sun2896cb72014-03-27 17:54:47 -07003 * Copyright 2008-2014 Freescale Semiconductor, Inc.
James Yang5b4da322008-08-26 15:01:27 -05004 */
5
6#ifndef _DDR_SPD_H_
7#define _DDR_SPD_H_
8
9/*
10 * Format from "JEDEC Standard No. 21-C,
11 * Appendix D: Rev 1.0: SPD's for DDR SDRAM
12 */
13typedef struct ddr1_spd_eeprom_s {
14 unsigned char info_size; /* 0 # bytes written into serial memory */
15 unsigned char chip_size; /* 1 Total # bytes of SPD memory device */
16 unsigned char mem_type; /* 2 Fundamental memory type */
17 unsigned char nrow_addr; /* 3 # of Row Addresses on this assembly */
18 unsigned char ncol_addr; /* 4 # of Column Addrs on this assembly */
19 unsigned char nrows; /* 5 Number of DIMM Banks */
20 unsigned char dataw_lsb; /* 6 Data Width of this assembly */
21 unsigned char dataw_msb; /* 7 ... Data Width continuation */
22 unsigned char voltage; /* 8 Voltage intf std of this assembly */
23 unsigned char clk_cycle; /* 9 SDRAM Cycle time @ CL=X */
24 unsigned char clk_access; /* 10 SDRAM Access from Clk @ CL=X (tAC) */
25 unsigned char config; /* 11 DIMM Configuration type */
26 unsigned char refresh; /* 12 Refresh Rate/Type */
27 unsigned char primw; /* 13 Primary SDRAM Width */
28 unsigned char ecw; /* 14 Error Checking SDRAM width */
29 unsigned char min_delay; /* 15 for Back to Back Random Address */
30 unsigned char burstl; /* 16 Burst Lengths Supported */
31 unsigned char nbanks; /* 17 # of Banks on SDRAM Device */
32 unsigned char cas_lat; /* 18 CAS# Latencies Supported */
33 unsigned char cs_lat; /* 19 CS# Latency */
34 unsigned char write_lat; /* 20 Write Latency (aka Write Recovery) */
35 unsigned char mod_attr; /* 21 SDRAM Module Attributes */
36 unsigned char dev_attr; /* 22 SDRAM Device Attributes */
37 unsigned char clk_cycle2; /* 23 Min SDRAM Cycle time @ CL=X-0.5 */
38 unsigned char clk_access2; /* 24 SDRAM Access from
Wolfgang Denkec7fbf52013-10-04 17:43:24 +020039 Clk @ CL=X-0.5 (tAC) */
James Yang5b4da322008-08-26 15:01:27 -050040 unsigned char clk_cycle3; /* 25 Min SDRAM Cycle time @ CL=X-1 */
41 unsigned char clk_access3; /* 26 Max Access from Clk @ CL=X-1 (tAC) */
42 unsigned char trp; /* 27 Min Row Precharge Time (tRP)*/
43 unsigned char trrd; /* 28 Min Row Active to Row Active (tRRD) */
44 unsigned char trcd; /* 29 Min RAS to CAS Delay (tRCD) */
45 unsigned char tras; /* 30 Minimum RAS Pulse Width (tRAS) */
46 unsigned char bank_dens; /* 31 Density of each bank on module */
47 unsigned char ca_setup; /* 32 Addr + Cmd Setup Time Before Clk */
48 unsigned char ca_hold; /* 33 Addr + Cmd Hold Time After Clk */
49 unsigned char data_setup; /* 34 Data Input Setup Time Before Strobe */
50 unsigned char data_hold; /* 35 Data Input Hold Time After Strobe */
51 unsigned char res_36_40[5];/* 36-40 reserved for VCSDRAM */
52 unsigned char trc; /* 41 Min Active to Auto refresh time tRC */
53 unsigned char trfc; /* 42 Min Auto to Active period tRFC */
54 unsigned char tckmax; /* 43 Max device cycle time tCKmax */
55 unsigned char tdqsq; /* 44 Max DQS to DQ skew (tDQSQ max) */
56 unsigned char tqhs; /* 45 Max Read DataHold skew (tQHS) */
57 unsigned char res_46; /* 46 Reserved */
58 unsigned char dimm_height; /* 47 DDR SDRAM DIMM Height */
59 unsigned char res_48_61[14]; /* 48-61 Reserved */
60 unsigned char spd_rev; /* 62 SPD Data Revision Code */
61 unsigned char cksum; /* 63 Checksum for bytes 0-62 */
62 unsigned char mid[8]; /* 64-71 Mfr's JEDEC ID code per JEP-106 */
63 unsigned char mloc; /* 72 Manufacturing Location */
64 unsigned char mpart[18]; /* 73 Manufacturer's Part Number */
65 unsigned char rev[2]; /* 91 Revision Code */
66 unsigned char mdate[2]; /* 93 Manufacturing Date */
67 unsigned char sernum[4]; /* 95 Assembly Serial Number */
68 unsigned char mspec[27]; /* 99-127 Manufacturer Specific Data */
69
70} ddr1_spd_eeprom_t;
71
72/*
73 * Format from "JEDEC Appendix X: Serial Presence Detects for DDR2 SDRAM",
74 * SPD Revision 1.2
75 */
76typedef struct ddr2_spd_eeprom_s {
77 unsigned char info_size; /* 0 # bytes written into serial memory */
78 unsigned char chip_size; /* 1 Total # bytes of SPD memory device */
79 unsigned char mem_type; /* 2 Fundamental memory type */
80 unsigned char nrow_addr; /* 3 # of Row Addresses on this assembly */
81 unsigned char ncol_addr; /* 4 # of Column Addrs on this assembly */
82 unsigned char mod_ranks; /* 5 Number of DIMM Ranks */
83 unsigned char dataw; /* 6 Module Data Width */
84 unsigned char res_7; /* 7 Reserved */
85 unsigned char voltage; /* 8 Voltage intf std of this assembly */
86 unsigned char clk_cycle; /* 9 SDRAM Cycle time @ CL=X */
87 unsigned char clk_access; /* 10 SDRAM Access from Clk @ CL=X (tAC) */
88 unsigned char config; /* 11 DIMM Configuration type */
89 unsigned char refresh; /* 12 Refresh Rate/Type */
90 unsigned char primw; /* 13 Primary SDRAM Width */
91 unsigned char ecw; /* 14 Error Checking SDRAM width */
92 unsigned char res_15; /* 15 Reserved */
93 unsigned char burstl; /* 16 Burst Lengths Supported */
94 unsigned char nbanks; /* 17 # of Banks on Each SDRAM Device */
95 unsigned char cas_lat; /* 18 CAS# Latencies Supported */
96 unsigned char mech_char; /* 19 DIMM Mechanical Characteristics */
97 unsigned char dimm_type; /* 20 DIMM type information */
98 unsigned char mod_attr; /* 21 SDRAM Module Attributes */
99 unsigned char dev_attr; /* 22 SDRAM Device Attributes */
100 unsigned char clk_cycle2; /* 23 Min SDRAM Cycle time @ CL=X-1 */
101 unsigned char clk_access2; /* 24 SDRAM Access from Clk @ CL=X-1 (tAC) */
102 unsigned char clk_cycle3; /* 25 Min SDRAM Cycle time @ CL=X-2 */
103 unsigned char clk_access3; /* 26 Max Access from Clk @ CL=X-2 (tAC) */
104 unsigned char trp; /* 27 Min Row Precharge Time (tRP)*/
105 unsigned char trrd; /* 28 Min Row Active to Row Active (tRRD) */
106 unsigned char trcd; /* 29 Min RAS to CAS Delay (tRCD) */
107 unsigned char tras; /* 30 Minimum RAS Pulse Width (tRAS) */
108 unsigned char rank_dens; /* 31 Density of each rank on module */
109 unsigned char ca_setup; /* 32 Addr+Cmd Setup Time Before Clk (tIS) */
110 unsigned char ca_hold; /* 33 Addr+Cmd Hold Time After Clk (tIH) */
111 unsigned char data_setup; /* 34 Data Input Setup Time
Wolfgang Denkec7fbf52013-10-04 17:43:24 +0200112 Before Strobe (tDS) */
James Yang5b4da322008-08-26 15:01:27 -0500113 unsigned char data_hold; /* 35 Data Input Hold Time
Wolfgang Denkec7fbf52013-10-04 17:43:24 +0200114 After Strobe (tDH) */
James Yang5b4da322008-08-26 15:01:27 -0500115 unsigned char twr; /* 36 Write Recovery time tWR */
116 unsigned char twtr; /* 37 Int write to read delay tWTR */
117 unsigned char trtp; /* 38 Int read to precharge delay tRTP */
118 unsigned char mem_probe; /* 39 Mem analysis probe characteristics */
119 unsigned char trctrfc_ext; /* 40 Extensions to trc and trfc */
120 unsigned char trc; /* 41 Min Active to Auto refresh time tRC */
121 unsigned char trfc; /* 42 Min Auto to Active period tRFC */
122 unsigned char tckmax; /* 43 Max device cycle time tCKmax */
123 unsigned char tdqsq; /* 44 Max DQS to DQ skew (tDQSQ max) */
124 unsigned char tqhs; /* 45 Max Read DataHold skew (tQHS) */
125 unsigned char pll_relock; /* 46 PLL Relock time */
Priyanka Jain4a717412013-09-25 10:41:19 +0530126 unsigned char t_casemax; /* 47 Tcasemax */
127 unsigned char psi_ta_dram; /* 48 Thermal Resistance of DRAM Package from
Wolfgang Denkec7fbf52013-10-04 17:43:24 +0200128 Top (Case) to Ambient (Psi T-A DRAM) */
James Yang5b4da322008-08-26 15:01:27 -0500129 unsigned char dt0_mode; /* 49 DRAM Case Temperature Rise from Ambient
Wolfgang Denkec7fbf52013-10-04 17:43:24 +0200130 due to Activate-Precharge/Mode Bits
James Yang5b4da322008-08-26 15:01:27 -0500131 (DT0/Mode Bits) */
132 unsigned char dt2n_dt2q; /* 50 DRAM Case Temperature Rise from Ambient
Wolfgang Denkec7fbf52013-10-04 17:43:24 +0200133 due to Precharge/Quiet Standby
James Yang5b4da322008-08-26 15:01:27 -0500134 (DT2N/DT2Q) */
135 unsigned char dt2p; /* 51 DRAM Case Temperature Rise from Ambient
Wolfgang Denkec7fbf52013-10-04 17:43:24 +0200136 due to Precharge Power-Down (DT2P) */
James Yang5b4da322008-08-26 15:01:27 -0500137 unsigned char dt3n; /* 52 DRAM Case Temperature Rise from Ambient
Wolfgang Denkec7fbf52013-10-04 17:43:24 +0200138 due to Active Standby (DT3N) */
James Yang5b4da322008-08-26 15:01:27 -0500139 unsigned char dt3pfast; /* 53 DRAM Case Temperature Rise from Ambient
Wolfgang Denkec7fbf52013-10-04 17:43:24 +0200140 due to Active Power-Down with
James Yang5b4da322008-08-26 15:01:27 -0500141 Fast PDN Exit (DT3Pfast) */
142 unsigned char dt3pslow; /* 54 DRAM Case Temperature Rise from Ambient
Wolfgang Denkec7fbf52013-10-04 17:43:24 +0200143 due to Active Power-Down with Slow
James Yang5b4da322008-08-26 15:01:27 -0500144 PDN Exit (DT3Pslow) */
145 unsigned char dt4r_dt4r4w; /* 55 DRAM Case Temperature Rise from Ambient
Wolfgang Denkec7fbf52013-10-04 17:43:24 +0200146 due to Page Open Burst Read/DT4R4W
James Yang5b4da322008-08-26 15:01:27 -0500147 Mode Bit (DT4R/DT4R4W Mode Bit) */
148 unsigned char dt5b; /* 56 DRAM Case Temperature Rise from Ambient
Wolfgang Denkec7fbf52013-10-04 17:43:24 +0200149 due to Burst Refresh (DT5B) */
James Yang5b4da322008-08-26 15:01:27 -0500150 unsigned char dt7; /* 57 DRAM Case Temperature Rise from Ambient
Wolfgang Denkec7fbf52013-10-04 17:43:24 +0200151 due to Bank Interleave Reads with
James Yang5b4da322008-08-26 15:01:27 -0500152 Auto-Precharge (DT7) */
Priyanka Jain4a717412013-09-25 10:41:19 +0530153 unsigned char psi_ta_pll; /* 58 Thermal Resistance of PLL Package form
Wolfgang Denkec7fbf52013-10-04 17:43:24 +0200154 Top (Case) to Ambient (Psi T-A PLL) */
Priyanka Jain4a717412013-09-25 10:41:19 +0530155 unsigned char psi_ta_reg; /* 59 Thermal Reisitance of Register Package
Wolfgang Denkec7fbf52013-10-04 17:43:24 +0200156 from Top (Case) to Ambient
James Yang5b4da322008-08-26 15:01:27 -0500157 (Psi T-A Register) */
158 unsigned char dtpllactive; /* 60 PLL Case Temperature Rise from Ambient
Wolfgang Denkec7fbf52013-10-04 17:43:24 +0200159 due to PLL Active (DT PLL Active) */
James Yang5b4da322008-08-26 15:01:27 -0500160 unsigned char dtregact; /* 61 Register Case Temperature Rise from
Wolfgang Denkec7fbf52013-10-04 17:43:24 +0200161 Ambient due to Register Active/Mode Bit
James Yang5b4da322008-08-26 15:01:27 -0500162 (DT Register Active/Mode Bit) */
163 unsigned char spd_rev; /* 62 SPD Data Revision Code */
164 unsigned char cksum; /* 63 Checksum for bytes 0-62 */
165 unsigned char mid[8]; /* 64 Mfr's JEDEC ID code per JEP-106 */
166 unsigned char mloc; /* 72 Manufacturing Location */
167 unsigned char mpart[18]; /* 73 Manufacturer's Part Number */
168 unsigned char rev[2]; /* 91 Revision Code */
169 unsigned char mdate[2]; /* 93 Manufacturing Date */
170 unsigned char sernum[4]; /* 95 Assembly Serial Number */
171 unsigned char mspec[27]; /* 99-127 Manufacturer Specific Data */
172
173} ddr2_spd_eeprom_t;
174
175typedef struct ddr3_spd_eeprom_s {
176 /* General Section: Bytes 0-59 */
177 unsigned char info_size_crc; /* 0 # bytes written into serial memory,
178 CRC coverage */
179 unsigned char spd_rev; /* 1 Total # bytes of SPD mem device */
180 unsigned char mem_type; /* 2 Key Byte / Fundamental mem type */
181 unsigned char module_type; /* 3 Key Byte / Module Type */
182 unsigned char density_banks; /* 4 SDRAM Density and Banks */
183 unsigned char addressing; /* 5 SDRAM Addressing */
Dave Liu4be87b22009-03-14 12:48:30 +0800184 unsigned char module_vdd; /* 6 Module nominal voltage, VDD */
James Yang5b4da322008-08-26 15:01:27 -0500185 unsigned char organization; /* 7 Module Organization */
186 unsigned char bus_width; /* 8 Module Memory Bus Width */
187 unsigned char ftb_div; /* 9 Fine Timebase (FTB)
188 Dividend / Divisor */
189 unsigned char mtb_dividend; /* 10 Medium Timebase (MTB) Dividend */
190 unsigned char mtb_divisor; /* 11 Medium Timebase (MTB) Divisor */
Priyanka Jain4a717412013-09-25 10:41:19 +0530191 unsigned char tck_min; /* 12 SDRAM Minimum Cycle Time */
James Yang5b4da322008-08-26 15:01:27 -0500192 unsigned char res_13; /* 13 Reserved */
193 unsigned char caslat_lsb; /* 14 CAS Latencies Supported,
194 Least Significant Byte */
195 unsigned char caslat_msb; /* 15 CAS Latencies Supported,
196 Most Significant Byte */
Priyanka Jain4a717412013-09-25 10:41:19 +0530197 unsigned char taa_min; /* 16 Min CAS Latency Time */
198 unsigned char twr_min; /* 17 Min Write REcovery Time */
199 unsigned char trcd_min; /* 18 Min RAS# to CAS# Delay Time */
200 unsigned char trrd_min; /* 19 Min Row Active to
James Yang5b4da322008-08-26 15:01:27 -0500201 Row Active Delay Time */
Priyanka Jain4a717412013-09-25 10:41:19 +0530202 unsigned char trp_min; /* 20 Min Row Precharge Delay Time */
203 unsigned char tras_trc_ext; /* 21 Upper Nibbles for tRAS and tRC */
204 unsigned char tras_min_lsb; /* 22 Min Active to Precharge
James Yang5b4da322008-08-26 15:01:27 -0500205 Delay Time */
Priyanka Jain4a717412013-09-25 10:41:19 +0530206 unsigned char trc_min_lsb; /* 23 Min Active to Active/Refresh
James Yang5b4da322008-08-26 15:01:27 -0500207 Delay Time, LSB */
Priyanka Jain4a717412013-09-25 10:41:19 +0530208 unsigned char trfc_min_lsb; /* 24 Min Refresh Recovery Delay Time */
209 unsigned char trfc_min_msb; /* 25 Min Refresh Recovery Delay Time */
210 unsigned char twtr_min; /* 26 Min Internal Write to
James Yang5b4da322008-08-26 15:01:27 -0500211 Read Command Delay Time */
Priyanka Jain4a717412013-09-25 10:41:19 +0530212 unsigned char trtp_min; /* 27 Min Internal Read to Precharge
James Yang5b4da322008-08-26 15:01:27 -0500213 Command Delay Time */
Priyanka Jain4a717412013-09-25 10:41:19 +0530214 unsigned char tfaw_msb; /* 28 Upper Nibble for tFAW */
215 unsigned char tfaw_min; /* 29 Min Four Activate Window
James Yang5b4da322008-08-26 15:01:27 -0500216 Delay Time*/
217 unsigned char opt_features; /* 30 SDRAM Optional Features */
218 unsigned char therm_ref_opt; /* 31 SDRAM Thermal and Refresh Opts */
York Sun72bdc802011-05-27 07:32:50 +0800219 unsigned char therm_sensor; /* 32 Module Thermal Sensor */
220 unsigned char device_type; /* 33 SDRAM device type */
Priyanka Jain4a717412013-09-25 10:41:19 +0530221 int8_t fine_tck_min; /* 34 Fine offset for tCKmin */
222 int8_t fine_taa_min; /* 35 Fine offset for tAAmin */
223 int8_t fine_trcd_min; /* 36 Fine offset for tRCDmin */
224 int8_t fine_trp_min; /* 37 Fine offset for tRPmin */
225 int8_t fine_trc_min; /* 38 Fine offset for tRCmin */
York Sun794c6922012-08-17 08:22:37 +0000226 unsigned char res_39_59[21]; /* 39-59 Reserved, General Section */
James Yang5b4da322008-08-26 15:01:27 -0500227
228 /* Module-Specific Section: Bytes 60-116 */
229 union {
230 struct {
231 /* 60 (Unbuffered) Module Nominal Height */
232 unsigned char mod_height;
233 /* 61 (Unbuffered) Module Maximum Thickness */
234 unsigned char mod_thickness;
235 /* 62 (Unbuffered) Reference Raw Card Used */
236 unsigned char ref_raw_card;
237 /* 63 (Unbuffered) Address Mapping from
238 Edge Connector to DRAM */
239 unsigned char addr_mapping;
240 /* 64-116 (Unbuffered) Reserved */
241 unsigned char res_64_116[53];
242 } unbuffered;
243 struct {
244 /* 60 (Registered) Module Nominal Height */
245 unsigned char mod_height;
246 /* 61 (Registered) Module Maximum Thickness */
247 unsigned char mod_thickness;
248 /* 62 (Registered) Reference Raw Card Used */
249 unsigned char ref_raw_card;
yorkde879322010-07-02 22:25:55 +0000250 /* 63 DIMM Module Attributes */
251 unsigned char modu_attr;
252 /* 64 RDIMM Thermal Heat Spreader Solution */
253 unsigned char thermal;
254 /* 65 Register Manufacturer ID Code, Least Significant Byte */
255 unsigned char reg_id_lo;
256 /* 66 Register Manufacturer ID Code, Most Significant Byte */
257 unsigned char reg_id_hi;
258 /* 67 Register Revision Number */
259 unsigned char reg_rev;
260 /* 68 Register Type */
261 unsigned char reg_type;
262 /* 69-76 RC1,3,5...15 (MS Nibble) / RC0,2,4...14 (LS Nibble) */
263 unsigned char rcw[8];
James Yang5b4da322008-08-26 15:01:27 -0500264 } registered;
265 unsigned char uc[57]; /* 60-116 Module-Specific Section */
266 } mod_section;
267
268 /* Unique Module ID: Bytes 117-125 */
269 unsigned char mmid_lsb; /* 117 Module MfgID Code LSB - JEP-106 */
270 unsigned char mmid_msb; /* 118 Module MfgID Code MSB - JEP-106 */
271 unsigned char mloc; /* 119 Mfg Location */
272 unsigned char mdate[2]; /* 120-121 Mfg Date */
273 unsigned char sernum[4]; /* 122-125 Module Serial Number */
274
275 /* CRC: Bytes 126-127 */
276 unsigned char crc[2]; /* 126-127 SPD CRC */
277
278 /* Other Manufacturer Fields and User Space: Bytes 128-255 */
279 unsigned char mpart[18]; /* 128-145 Mfg's Module Part Number */
280 unsigned char mrev[2]; /* 146-147 Module Revision Code */
281
282 unsigned char dmid_lsb; /* 148 DRAM MfgID Code LSB - JEP-106 */
283 unsigned char dmid_msb; /* 149 DRAM MfgID Code MSB - JEP-106 */
284
285 unsigned char msd[26]; /* 150-175 Mfg's Specific Data */
286 unsigned char cust[80]; /* 176-255 Open for Customer Use */
287
288} ddr3_spd_eeprom_t;
289
York Sun2896cb72014-03-27 17:54:47 -0700290/* From JEEC Standard No. 21-C release 23A */
291struct ddr4_spd_eeprom_s {
292 /* General Section: Bytes 0-127 */
293 uint8_t info_size_crc; /* 0 # bytes */
294 uint8_t spd_rev; /* 1 Total # bytes of SPD */
295 uint8_t mem_type; /* 2 Key Byte / mem type */
296 uint8_t module_type; /* 3 Key Byte / Module Type */
297 uint8_t density_banks; /* 4 Density and Banks */
298 uint8_t addressing; /* 5 Addressing */
299 uint8_t package_type; /* 6 Package type */
300 uint8_t opt_feature; /* 7 Optional features */
301 uint8_t thermal_ref; /* 8 Thermal and refresh */
302 uint8_t oth_opt_features; /* 9 Other optional features */
303 uint8_t res_10; /* 10 Reserved */
304 uint8_t module_vdd; /* 11 Module nominal voltage */
305 uint8_t organization; /* 12 Module Organization */
306 uint8_t bus_width; /* 13 Module Memory Bus Width */
307 uint8_t therm_sensor; /* 14 Module Thermal Sensor */
308 uint8_t ext_type; /* 15 Extended module type */
309 uint8_t res_16;
310 uint8_t timebases; /* 17 MTb and FTB */
311 uint8_t tck_min; /* 18 tCKAVGmin */
312 uint8_t tck_max; /* 19 TCKAVGmax */
313 uint8_t caslat_b1; /* 20 CAS latencies, 1st byte */
314 uint8_t caslat_b2; /* 21 CAS latencies, 2nd byte */
315 uint8_t caslat_b3; /* 22 CAS latencies, 3rd byte */
316 uint8_t caslat_b4; /* 23 CAS latencies, 4th byte */
317 uint8_t taa_min; /* 24 Min CAS Latency Time */
318 uint8_t trcd_min; /* 25 Min RAS# to CAS# Delay Time */
319 uint8_t trp_min; /* 26 Min Row Precharge Delay Time */
320 uint8_t tras_trc_ext; /* 27 Upper Nibbles for tRAS and tRC */
321 uint8_t tras_min_lsb; /* 28 tRASmin, lsb */
322 uint8_t trc_min_lsb; /* 29 tRCmin, lsb */
323 uint8_t trfc1_min_lsb; /* 30 Min Refresh Recovery Delay Time */
324 uint8_t trfc1_min_msb; /* 31 Min Refresh Recovery Delay Time */
325 uint8_t trfc2_min_lsb; /* 32 Min Refresh Recovery Delay Time */
326 uint8_t trfc2_min_msb; /* 33 Min Refresh Recovery Delay Time */
327 uint8_t trfc4_min_lsb; /* 34 Min Refresh Recovery Delay Time */
328 uint8_t trfc4_min_msb; /* 35 Min Refresh Recovery Delay Time */
329 uint8_t tfaw_msb; /* 36 Upper Nibble for tFAW */
330 uint8_t tfaw_min; /* 37 tFAW, lsb */
331 uint8_t trrds_min; /* 38 tRRD_Smin, MTB */
332 uint8_t trrdl_min; /* 39 tRRD_Lmin, MTB */
333 uint8_t tccdl_min; /* 40 tCCS_Lmin, MTB */
334 uint8_t res_41[60-41]; /* 41 Rserved */
335 uint8_t mapping[78-60]; /* 60~77 Connector to SDRAM bit map */
336 uint8_t res_78[117-78]; /* 78~116, Reserved */
337 int8_t fine_tccdl_min; /* 117 Fine offset for tCCD_Lmin */
338 int8_t fine_trrdl_min; /* 118 Fine offset for tRRD_Lmin */
339 int8_t fine_trrds_min; /* 119 Fine offset for tRRD_Smin */
340 int8_t fine_trc_min; /* 120 Fine offset for tRCmin */
341 int8_t fine_trp_min; /* 121 Fine offset for tRPmin */
342 int8_t fine_trcd_min; /* 122 Fine offset for tRCDmin */
343 int8_t fine_taa_min; /* 123 Fine offset for tAAmin */
344 int8_t fine_tck_max; /* 124 Fine offset for tCKAVGmax */
345 int8_t fine_tck_min; /* 125 Fine offset for tCKAVGmin */
346 /* CRC: Bytes 126-127 */
347 uint8_t crc[2]; /* 126-127 SPD CRC */
348
349 /* Module-Specific Section: Bytes 128-255 */
350 union {
351 struct {
352 /* 128 (Unbuffered) Module Nominal Height */
353 uint8_t mod_height;
354 /* 129 (Unbuffered) Module Maximum Thickness */
355 uint8_t mod_thickness;
356 /* 130 (Unbuffered) Reference Raw Card Used */
357 uint8_t ref_raw_card;
358 /* 131 (Unbuffered) Address Mapping from
359 Edge Connector to DRAM */
360 uint8_t addr_mapping;
361 /* 132~253 (Unbuffered) Reserved */
362 uint8_t res_132[254-132];
363 /* 254~255 CRC */
364 uint8_t crc[2];
365 } unbuffered;
366 struct {
367 /* 128 (Registered) Module Nominal Height */
368 uint8_t mod_height;
369 /* 129 (Registered) Module Maximum Thickness */
370 uint8_t mod_thickness;
371 /* 130 (Registered) Reference Raw Card Used */
372 uint8_t ref_raw_card;
373 /* 131 DIMM Module Attributes */
374 uint8_t modu_attr;
375 /* 132 RDIMM Thermal Heat Spreader Solution */
376 uint8_t thermal;
377 /* 133 Register Manufacturer ID Code, LSB */
378 uint8_t reg_id_lo;
379 /* 134 Register Manufacturer ID Code, MSB */
380 uint8_t reg_id_hi;
381 /* 135 Register Revision Number */
382 uint8_t reg_rev;
383 /* 136 Address mapping from register to DRAM */
York Sunbc2f32a2018-01-29 10:24:08 -0800384 u8 reg_map;
385 u8 ca_stren;
386 u8 clk_stren;
387 /* 139~253 Reserved */
388 u8 res_137[254 - 139];
York Sun2896cb72014-03-27 17:54:47 -0700389 /* 254~255 CRC */
390 uint8_t crc[2];
391 } registered;
392 struct {
393 /* 128 (Loadreduced) Module Nominal Height */
394 uint8_t mod_height;
395 /* 129 (Loadreduced) Module Maximum Thickness */
396 uint8_t mod_thickness;
397 /* 130 (Loadreduced) Reference Raw Card Used */
398 uint8_t ref_raw_card;
399 /* 131 DIMM Module Attributes */
400 uint8_t modu_attr;
401 /* 132 RDIMM Thermal Heat Spreader Solution */
402 uint8_t thermal;
403 /* 133 Register Manufacturer ID Code, LSB */
404 uint8_t reg_id_lo;
405 /* 134 Register Manufacturer ID Code, MSB */
406 uint8_t reg_id_hi;
407 /* 135 Register Revision Number */
408 uint8_t reg_rev;
409 /* 136 Address mapping from register to DRAM */
410 uint8_t reg_map;
411 /* 137 Register Output Drive Strength for CMD/Add*/
412 uint8_t reg_drv;
413 /* 138 Register Output Drive Strength for CK */
414 uint8_t reg_drv_ck;
415 /* 139 Data Buffer Revision Number */
416 uint8_t data_buf_rev;
417 /* 140 DRAM VrefDQ for Package Rank 0 */
418 uint8_t vrefqe_r0;
419 /* 141 DRAM VrefDQ for Package Rank 1 */
420 uint8_t vrefqe_r1;
421 /* 142 DRAM VrefDQ for Package Rank 2 */
422 uint8_t vrefqe_r2;
423 /* 143 DRAM VrefDQ for Package Rank 3 */
424 uint8_t vrefqe_r3;
425 /* 144 Data Buffer VrefDQ for DRAM Interface */
426 uint8_t data_intf;
427 /*
428 * 145 Data Buffer MDQ Drive Strength and RTT
429 * for data rate <= 1866
430 */
431 uint8_t data_drv_1866;
432 /*
433 * 146 Data Buffer MDQ Drive Strength and RTT
434 * for 1866 < data rate <= 2400
435 */
436 uint8_t data_drv_2400;
437 /*
438 * 147 Data Buffer MDQ Drive Strength and RTT
439 * for 2400 < data rate <= 3200
440 */
441 uint8_t data_drv_3200;
442 /* 148 DRAM Drive Strength */
443 uint8_t dram_drv;
444 /*
445 * 149 DRAM ODT (RTT_WR, RTT_NOM)
446 * for data rate <= 1866
447 */
448 uint8_t dram_odt_1866;
449 /*
450 * 150 DRAM ODT (RTT_WR, RTT_NOM)
451 * for 1866 < data rate <= 2400
452 */
453 uint8_t dram_odt_2400;
454 /*
455 * 151 DRAM ODT (RTT_WR, RTT_NOM)
456 * for 2400 < data rate <= 3200
457 */
458 uint8_t dram_odt_3200;
459 /*
460 * 152 DRAM ODT (RTT_PARK)
461 * for data rate <= 1866
462 */
463 uint8_t dram_odt_park_1866;
464 /*
465 * 153 DRAM ODT (RTT_PARK)
466 * for 1866 < data rate <= 2400
467 */
468 uint8_t dram_odt_park_2400;
469 /*
470 * 154 DRAM ODT (RTT_PARK)
471 * for 2400 < data rate <= 3200
472 */
473 uint8_t dram_odt_park_3200;
474 uint8_t res_155[254-155]; /* Reserved */
475 /* 254~255 CRC */
476 uint8_t crc[2];
477 } loadreduced;
478 uint8_t uc[128]; /* 128-255 Module-Specific Section */
479 } mod_section;
480
481 uint8_t res_256[320-256]; /* 256~319 Reserved */
482
483 /* Module supplier's data: Byte 320~383 */
484 uint8_t mmid_lsb; /* 320 Module MfgID Code LSB */
485 uint8_t mmid_msb; /* 321 Module MfgID Code MSB */
486 uint8_t mloc; /* 322 Mfg Location */
487 uint8_t mdate[2]; /* 323~324 Mfg Date */
488 uint8_t sernum[4]; /* 325~328 Module Serial Number */
489 uint8_t mpart[20]; /* 329~348 Mfg's Module Part Number */
490 uint8_t mrev; /* 349 Module Revision Code */
491 uint8_t dmid_lsb; /* 350 DRAM MfgID Code LSB */
492 uint8_t dmid_msb; /* 351 DRAM MfgID Code MSB */
493 uint8_t stepping; /* 352 DRAM stepping */
494 uint8_t msd[29]; /* 353~381 Mfg's Specific Data */
495 uint8_t res_382[2]; /* 382~383 Reserved */
496
497 uint8_t user[512-384]; /* 384~511 End User Programmable */
498};
499
James Yang5b4da322008-08-26 15:01:27 -0500500extern unsigned int ddr1_spd_check(const ddr1_spd_eeprom_t *spd);
501extern void ddr1_spd_dump(const ddr1_spd_eeprom_t *spd);
502extern unsigned int ddr2_spd_check(const ddr2_spd_eeprom_t *spd);
503extern void ddr2_spd_dump(const ddr2_spd_eeprom_t *spd);
Dave Liu4be87b22009-03-14 12:48:30 +0800504extern unsigned int ddr3_spd_check(const ddr3_spd_eeprom_t *spd);
York Sun2896cb72014-03-27 17:54:47 -0700505unsigned int ddr4_spd_check(const struct ddr4_spd_eeprom_s *spd);
James Yang5b4da322008-08-26 15:01:27 -0500506
507/*
508 * Byte 2 Fundamental Memory Types.
509 */
510#define SPD_MEMTYPE_FPM (0x01)
511#define SPD_MEMTYPE_EDO (0x02)
512#define SPD_MEMTYPE_PIPE_NIBBLE (0x03)
513#define SPD_MEMTYPE_SDRAM (0x04)
514#define SPD_MEMTYPE_ROM (0x05)
515#define SPD_MEMTYPE_SGRAM (0x06)
516#define SPD_MEMTYPE_DDR (0x07)
517#define SPD_MEMTYPE_DDR2 (0x08)
518#define SPD_MEMTYPE_DDR2_FBDIMM (0x09)
519#define SPD_MEMTYPE_DDR2_FBDIMM_PROBE (0x0A)
520#define SPD_MEMTYPE_DDR3 (0x0B)
York Sun2896cb72014-03-27 17:54:47 -0700521#define SPD_MEMTYPE_DDR4 (0x0C)
James Yang5b4da322008-08-26 15:01:27 -0500522
Kyle Moffett046d7722011-03-28 11:35:48 -0400523/* DIMM Type for DDR2 SPD (according to v1.3) */
524#define DDR2_SPD_DIMMTYPE_UNDEFINED (0x00)
525#define DDR2_SPD_DIMMTYPE_RDIMM (0x01)
526#define DDR2_SPD_DIMMTYPE_UDIMM (0x02)
527#define DDR2_SPD_DIMMTYPE_SO_DIMM (0x04)
528#define DDR2_SPD_DIMMTYPE_72B_SO_CDIMM (0x06)
529#define DDR2_SPD_DIMMTYPE_72B_SO_RDIMM (0x07)
530#define DDR2_SPD_DIMMTYPE_MICRO_DIMM (0x08)
531#define DDR2_SPD_DIMMTYPE_MINI_RDIMM (0x10)
532#define DDR2_SPD_DIMMTYPE_MINI_UDIMM (0x20)
533
534/* Byte 3 Key Byte / Module Type for DDR3 SPD */
535#define DDR3_SPD_MODULETYPE_MASK (0x0f)
536#define DDR3_SPD_MODULETYPE_RDIMM (0x01)
537#define DDR3_SPD_MODULETYPE_UDIMM (0x02)
538#define DDR3_SPD_MODULETYPE_SO_DIMM (0x03)
539#define DDR3_SPD_MODULETYPE_MICRO_DIMM (0x04)
540#define DDR3_SPD_MODULETYPE_MINI_RDIMM (0x05)
541#define DDR3_SPD_MODULETYPE_MINI_UDIMM (0x06)
Ira W. Snyder09da8b82011-11-21 13:20:33 -0800542#define DDR3_SPD_MODULETYPE_MINI_CDIMM (0x07)
543#define DDR3_SPD_MODULETYPE_72B_SO_UDIMM (0x08)
544#define DDR3_SPD_MODULETYPE_72B_SO_RDIMM (0x09)
545#define DDR3_SPD_MODULETYPE_72B_SO_CDIMM (0x0A)
546#define DDR3_SPD_MODULETYPE_LRDIMM (0x0B)
547#define DDR3_SPD_MODULETYPE_16B_SO_DIMM (0x0C)
548#define DDR3_SPD_MODULETYPE_32B_SO_DIMM (0x0D)
Dave Liu4be87b22009-03-14 12:48:30 +0800549
York Sun2896cb72014-03-27 17:54:47 -0700550/* DIMM Type for DDR4 SPD */
551#define DDR4_SPD_MODULETYPE_MASK (0x0f)
552#define DDR4_SPD_MODULETYPE_EXT (0x00)
553#define DDR4_SPD_MODULETYPE_RDIMM (0x01)
554#define DDR4_SPD_MODULETYPE_UDIMM (0x02)
555#define DDR4_SPD_MODULETYPE_SO_DIMM (0x03)
556#define DDR4_SPD_MODULETYPE_LRDIMM (0x04)
557#define DDR4_SPD_MODULETYPE_MINI_RDIMM (0x05)
558#define DDR4_SPD_MODULETYPE_MINI_UDIMM (0x06)
559#define DDR4_SPD_MODULETYPE_72B_SO_UDIMM (0x08)
560#define DDR4_SPD_MODULETYPE_72B_SO_RDIMM (0x09)
561#define DDR4_SPD_MODULETYPE_16B_SO_DIMM (0x0C)
562#define DDR4_SPD_MODULETYPE_32B_SO_DIMM (0x0D)
563
James Yang5b4da322008-08-26 15:01:27 -0500564#endif /* _DDR_SPD_H_ */