/*
 * Copyright (C) 2014 Stefan Roese <sr@denx.de>
 *
 * Based on: gw_ventana_spl.c which is:
 * Copyright (C) 2014 Gateworks Corporation
 *
 * SPDX-License-Identifier:     GPL-2.0+
 */

#include <common.h>
#include <i2c.h>
#include <asm/io.h>
#include <asm/arch/iomux.h>
#include <asm/arch/mx6-ddr.h>
#include <asm/arch/mx6-pins.h>
#include <asm/arch/sys_proto.h>
#include <asm/mach-imx/boot_mode.h>
#include <asm/mach-imx/iomux-v3.h>
#include <asm/mach-imx/mxc_i2c.h>
#include <spl.h>

#include "platinum.h"

#undef RTT_NOM_120OHM	/* use 120ohm Rtt_nom vs 60ohm (lower power) */

/* Configure MX6Q/DUAL mmdc DDR io registers */
struct mx6dq_iomux_ddr_regs mx6dq_ddr_ioregs = {
	/* SDCLK[0:1], CAS, RAS, Reset: Differential input, 40ohm */
	.dram_sdclk_0 = 0x00020030,
	.dram_sdclk_1 = 0x00020030,
	.dram_cas = 0x00020030,
	.dram_ras = 0x00020030,
	.dram_reset = 0x00020030,
	/* SDCKE[0:1]: 100k pull-up */
	.dram_sdcke0 = 0x00003000,
	.dram_sdcke1 = 0x00003000,
	/* SDBA2: pull-up disabled */
	.dram_sdba2 = 0x00000000,
	/* SDODT[0:1]: 100k pull-up, 40 ohm */
	.dram_sdodt0 = 0x00003030,
	.dram_sdodt1 = 0x00003030,
	/* SDQS[0:7]: Differential input, 40 ohm */
	.dram_sdqs0 = 0x00000030,
	.dram_sdqs1 = 0x00000030,
	.dram_sdqs2 = 0x00000030,
	.dram_sdqs3 = 0x00000030,
	.dram_sdqs4 = 0x00000030,
	.dram_sdqs5 = 0x00000030,
	.dram_sdqs6 = 0x00000030,
	.dram_sdqs7 = 0x00000030,
	/* DQM[0:7]: Differential input, 40 ohm */
	.dram_dqm0 = 0x00020030,
	.dram_dqm1 = 0x00020030,
	.dram_dqm2 = 0x00020030,
	.dram_dqm3 = 0x00020030,
	.dram_dqm4 = 0x00020030,
	.dram_dqm5 = 0x00020030,
	.dram_dqm6 = 0x00020030,
	.dram_dqm7 = 0x00020030,
};

/* Configure MX6Q/DUAL mmdc GRP io registers */
struct mx6dq_iomux_grp_regs mx6dq_grp_ioregs = {
	/* DDR3 */
	.grp_ddr_type = 0x000c0000,
	.grp_ddrmode_ctl = 0x00020000,
	/* disable DDR pullups */
	.grp_ddrpke = 0x00000000,
	/* ADDR[00:16], SDBA[0:1]: 40 ohm */
	.grp_addds = 0x00000030,
	/* CS0/CS1/SDBA2/CKE0/CKE1/SDWE: 40 ohm */
	.grp_ctlds = 0x00000030,
	/* DATA[00:63]: Differential input, 40 ohm */
	.grp_ddrmode = 0x00020000,
	.grp_b0ds = 0x00000030,
	.grp_b1ds = 0x00000030,
	.grp_b2ds = 0x00000030,
	.grp_b3ds = 0x00000030,
	.grp_b4ds = 0x00000030,
	.grp_b5ds = 0x00000030,
	.grp_b6ds = 0x00000030,
	.grp_b7ds = 0x00000030,
};

/* MT41J128M16JT-125 */
static struct mx6_ddr3_cfg mt41j128m16jt_125 = {
	.mem_speed = 1600,
	.density = 2,
	.width = 16,
	.banks = 8,
	.rowaddr = 14,
	.coladdr = 10,
	.pagesz = 2,
	.trcd = 1375,
	.trcmin = 4875,
	.trasmin = 3500,
};

static struct mx6_mmdc_calibration mx6dq_mmdc_calib = {
	/* Write leveling calibration determine */
	.p0_mpwldectrl0 = 0x001f001f,
	.p0_mpwldectrl1 = 0x001f001f,
	.p1_mpwldectrl0 = 0x00440044,
	.p1_mpwldectrl1 = 0x00440044,
	/* Read DQS Gating calibration */
	.p0_mpdgctrl0 = 0x434b0350,
	.p0_mpdgctrl1 = 0x034c0359,
	.p1_mpdgctrl0 = 0x434b0350,
	.p1_mpdgctrl1 = 0x03650348,
	/* Read Calibration: DQS delay relative to DQ read access */
	.p0_mprddlctl = 0x4436383b,
	.p1_mprddlctl = 0x39393341,
	/* Write Calibration: DQ/DM delay relative to DQS write access */
	.p0_mpwrdlctl = 0x35373933,
	.p1_mpwrdlctl = 0x48254a36,
};

static void spl_dram_init(int width)
{
	struct mx6_ddr3_cfg *mem = &mt41j128m16jt_125;
	struct mx6_ddr_sysinfo sysinfo = {
		/* width of data bus:0=16,1=32,2=64 */
		.dsize = width / 32,
		/* config for full 4GB range so that get_mem_size() works */
		.cs_density = 32, /* 32Gb per CS */
		/* single chip select */
		.ncs = 1,
		.cs1_mirror = 1,
		.rtt_wr = 1 /*DDR3_RTT_60_OHM*/,	/* RTT_Wr = RZQ/4 */
#ifdef RTT_NOM_120OHM
		.rtt_nom = 2 /*DDR3_RTT_120_OHM*/,	/* RTT_Nom = RZQ/2 */
#else
		.rtt_nom = 1 /*DDR3_RTT_60_OHM*/,	/* RTT_Nom = RZQ/4 */
#endif
		.walat = 0,	/* Write additional latency */
		.ralat = 5,	/* Read additional latency */
		.mif3_mode = 3,	/* Command prediction working mode */
		.bi_on = 1,	/* Bank interleaving enabled */
		.sde_to_rst = 0x10,	/* 14 cycles, 200us (JEDEC default) */
		.rst_to_cke = 0x23,	/* 33 cycles, 500us (JEDEC default) */
		.ddr_type = DDR_TYPE_DDR3,
		.refsel = 1,		/* Refresh cycles at 32KHz */
		.refr = 7,		/* 8 refresh commands per refresh cycle */
	};

	mx6dq_dram_iocfg(width, &mx6dq_ddr_ioregs, &mx6dq_grp_ioregs);
	mx6_dram_cfg(&sysinfo, &mx6dq_mmdc_calib, mem);
}

/*
 * Called from C runtime startup code (arch/arm/lib/crt0.S:_main)
 * - we have a stack and a place to store GD, both in SRAM
 * - no variable global data is available
 */
void board_init_f(ulong dummy)
{
	/* Setup AIPS and disable watchdog */
	arch_cpu_init();

	ccgr_init();
	gpr_init();

	/* UART iomux */
	board_early_init_f();

	/* Setup GP timer */
	timer_init();

	/* UART clocks enabled and gd valid - init serial console */
	preloader_console_init();

	/* Init DDR with 32bit width */
	spl_dram_init(32);

	/* Clear the BSS */
	memset(__bss_start, 0, __bss_end - __bss_start);

	/*
	 * Setup enet related MUXing early to give the PHY
	 * some time to wake-up from reset
	 */
	platinum_setup_enet();

	/* load/boot image from boot device */
	board_init_r(NULL, 0);
}