sunxi: Convert H616 DRAM options to single setting
Vendor DRAM settings use TPR10 parameter to enable various features.
There are many mores features that just those that are currently
mentioned. Since new will be added later and most are not known, let's
reuse value from vendor DRAM driver as-is. This will also help adding
support for new boards.
Signed-off-by: Jernej Skrabec <jernej.skrabec@gmail.com>
Reviewed-by: Andre Przywara <andre.przywara@arm.com>
Signed-off-by: Andre Przywara <andre.przywara@arm.com>
diff --git a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
index c9e1f84..dbdc6b6 100644
--- a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
+++ b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
@@ -137,6 +137,14 @@
#define MSTR_ACTIVE_RANKS(x) (((x == 2) ? 3 : 1) << 24)
#define MSTR_BURST_LENGTH(x) (((x) >> 1) << 16)
+#define TPR10_CA_BIT_DELAY BIT(16)
+#define TPR10_DX_BIT_DELAY0 BIT(17)
+#define TPR10_DX_BIT_DELAY1 BIT(18)
+#define TPR10_WRITE_LEVELING BIT(20)
+#define TPR10_READ_CALIBRATION BIT(21)
+#define TPR10_READ_TRAINING BIT(22)
+#define TPR10_WRITE_TRAINING BIT(23)
+
struct dram_para {
u32 clk;
enum sunxi_dram_type type;
@@ -147,6 +155,7 @@
u32 dx_odt;
u32 dx_dri;
u32 ca_dri;
+ u32 tpr10;
};
diff --git a/arch/arm/mach-sunxi/Kconfig b/arch/arm/mach-sunxi/Kconfig
index 14fb9a9..1b47a49 100644
--- a/arch/arm/mach-sunxi/Kconfig
+++ b/arch/arm/mach-sunxi/Kconfig
@@ -52,38 +52,6 @@
like H616.
if DRAM_SUN50I_H616
-config DRAM_SUN50I_H616_WRITE_LEVELING
- bool "H616 DRAM write leveling"
- ---help---
- Select this when DRAM on your H616 board needs write leveling.
-
-config DRAM_SUN50I_H616_READ_CALIBRATION
- bool "H616 DRAM read calibration"
- ---help---
- Select this when DRAM on your H616 board needs read calibration.
-
-config DRAM_SUN50I_H616_READ_TRAINING
- bool "H616 DRAM read training"
- ---help---
- Select this when DRAM on your H616 board needs read training.
-
-config DRAM_SUN50I_H616_WRITE_TRAINING
- bool "H616 DRAM write training"
- ---help---
- Select this when DRAM on your H616 board needs write training.
-
-config DRAM_SUN50I_H616_BIT_DELAY_COMPENSATION
- bool "H616 DRAM bit delay compensation"
- ---help---
- Select this when DRAM on your H616 board needs bit delay
- compensation.
-
-config DRAM_SUN50I_H616_UNKNOWN_FEATURE
- bool "H616 DRAM unknown feature"
- ---help---
- Select this when DRAM on your H616 board needs this unknown
- feature.
-
config DRAM_SUN50I_H616_DX_ODT
hex "H616 DRAM DX ODT parameter"
help
@@ -98,6 +66,12 @@
hex "H616 DRAM CA DRI parameter"
help
CA DRI value from vendor DRAM settings.
+
+config DRAM_SUN50I_H616_TPR10
+ hex "H616 DRAM TPR10 parameter"
+ help
+ TPR10 value from vendor DRAM settings. It tells which features
+ should be configured, like write leveling, read calibration, etc.
endif
config SUN6I_PRCM
diff --git a/arch/arm/mach-sunxi/dram_sun50i_h616.c b/arch/arm/mach-sunxi/dram_sun50i_h616.c
index 06a07dfb..630c7c3 100644
--- a/arch/arm/mach-sunxi/dram_sun50i_h616.c
+++ b/arch/arm/mach-sunxi/dram_sun50i_h616.c
@@ -577,109 +577,112 @@
u32 *ptr;
int i;
- clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x60, 1);
- setbits_le32(SUNXI_DRAM_PHY0_BASE + 8, 8);
- clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x190, 0x10);
+ if (para->tpr10 & TPR10_DX_BIT_DELAY1) {
+ clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x60, 1);
+ setbits_le32(SUNXI_DRAM_PHY0_BASE + 8, 8);
+ clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x190, 0x10);
- ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x484);
- for (i = 0; i < 9; i++) {
- writel_relaxed(0x16, ptr);
- writel_relaxed(0x16, ptr + 0x30);
- ptr += 2;
- }
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4d0);
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x590);
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4cc);
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x58c);
+ ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x484);
+ for (i = 0; i < 9; i++) {
+ writel_relaxed(0x16, ptr);
+ writel_relaxed(0x16, ptr + 0x30);
+ ptr += 2;
+ }
+ writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4d0);
+ writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x590);
+ writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4cc);
+ writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x58c);
- ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x4d8);
- for (i = 0; i < 9; i++) {
- writel_relaxed(0x1a, ptr);
- writel_relaxed(0x1a, ptr + 0x30);
- ptr += 2;
- }
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x524);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x5e4);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x520);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x5e0);
+ ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x4d8);
+ for (i = 0; i < 9; i++) {
+ writel_relaxed(0x1a, ptr);
+ writel_relaxed(0x1a, ptr + 0x30);
+ ptr += 2;
+ }
+ writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x524);
+ writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x5e4);
+ writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x520);
+ writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x5e0);
- ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x604);
- for (i = 0; i < 9; i++) {
- writel_relaxed(0x1a, ptr);
- writel_relaxed(0x1a, ptr + 0x30);
- ptr += 2;
- }
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x650);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x710);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x64c);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x70c);
+ ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x604);
+ for (i = 0; i < 9; i++) {
+ writel_relaxed(0x1a, ptr);
+ writel_relaxed(0x1a, ptr + 0x30);
+ ptr += 2;
+ }
+ writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x650);
+ writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x710);
+ writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x64c);
+ writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x70c);
- ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x658);
- for (i = 0; i < 9; i++) {
- writel_relaxed(0x1a, ptr);
- writel_relaxed(0x1a, ptr + 0x30);
- ptr += 2;
- }
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x6a4);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x764);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x6a0);
- writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x760);
+ ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x658);
+ for (i = 0; i < 9; i++) {
+ writel_relaxed(0x1a, ptr);
+ writel_relaxed(0x1a, ptr + 0x30);
+ ptr += 2;
+ }
+ writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x6a4);
+ writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x764);
+ writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x6a0);
+ writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x760);
- dmb();
+ dmb();
- setbits_le32(SUNXI_DRAM_PHY0_BASE + 0x60, 1);
+ setbits_le32(SUNXI_DRAM_PHY0_BASE + 0x60, 1);
+ }
- /* second part */
- clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x54, 0x80);
- clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x190, 4);
+ if (para->tpr10 & TPR10_DX_BIT_DELAY0) {
+ clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x54, 0x80);
+ clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x190, 4);
- ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x480);
- for (i = 0; i < 9; i++) {
- writel_relaxed(0x10, ptr);
- writel_relaxed(0x10, ptr + 0x30);
- ptr += 2;
- }
- writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x528);
- writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x5e8);
- writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x4c8);
- writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x588);
+ ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x480);
+ for (i = 0; i < 9; i++) {
+ writel_relaxed(0x10, ptr);
+ writel_relaxed(0x10, ptr + 0x30);
+ ptr += 2;
+ }
+ writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x528);
+ writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x5e8);
+ writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x4c8);
+ writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x588);
- ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x4d4);
- for (i = 0; i < 9; i++) {
- writel_relaxed(0x12, ptr);
- writel_relaxed(0x12, ptr + 0x30);
- ptr += 2;
- }
- writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x52c);
- writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x5ec);
- writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x51c);
- writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x5dc);
+ ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x4d4);
+ for (i = 0; i < 9; i++) {
+ writel_relaxed(0x12, ptr);
+ writel_relaxed(0x12, ptr + 0x30);
+ ptr += 2;
+ }
+ writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x52c);
+ writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x5ec);
+ writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x51c);
+ writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x5dc);
- ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x600);
- for (i = 0; i < 9; i++) {
- writel_relaxed(0x12, ptr);
- writel_relaxed(0x12, ptr + 0x30);
- ptr += 2;
- }
- writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x6a8);
- writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x768);
- writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x648);
- writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x708);
+ ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x600);
+ for (i = 0; i < 9; i++) {
+ writel_relaxed(0x12, ptr);
+ writel_relaxed(0x12, ptr + 0x30);
+ ptr += 2;
+ }
+ writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x6a8);
+ writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x768);
+ writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x648);
+ writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x708);
- ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x654);
- for (i = 0; i < 9; i++) {
- writel_relaxed(0x14, ptr);
- writel_relaxed(0x14, ptr + 0x30);
- ptr += 2;
- }
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x6ac);
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x76c);
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x69c);
- writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x75c);
+ ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x654);
+ for (i = 0; i < 9; i++) {
+ writel_relaxed(0x14, ptr);
+ writel_relaxed(0x14, ptr + 0x30);
+ ptr += 2;
+ }
+ writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x6ac);
+ writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x76c);
+ writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x69c);
+ writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x75c);
- dmb();
+ dmb();
- setbits_le32(SUNXI_DRAM_PHY0_BASE + 0x54, 0x80);
+ setbits_le32(SUNXI_DRAM_PHY0_BASE + 0x54, 0x80);
+ }
return true;
}
@@ -718,7 +721,7 @@
for (i = 0; i < ARRAY_SIZE(phy_init); i++)
writel(phy_init[i], &ptr[i]);
- if (IS_ENABLED(CONFIG_DRAM_SUN50I_H616_UNKNOWN_FEATURE)) {
+ if (para->tpr10 & TPR10_CA_BIT_DELAY) {
ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x780);
for (i = 0; i < 32; i++)
writel(0x16, &ptr[i]);
@@ -800,7 +803,7 @@
clrbits_le32(&mctl_ctl->rfshctl3, 1);
writel(1, &mctl_ctl->swctl);
- if (IS_ENABLED(CONFIG_DRAM_SUN50I_H616_WRITE_LEVELING)) {
+ if (para->tpr10 & TPR10_WRITE_LEVELING) {
for (i = 0; i < 5; i++)
if (mctl_phy_write_leveling(para))
break;
@@ -810,7 +813,7 @@
}
}
- if (IS_ENABLED(CONFIG_DRAM_SUN50I_H616_READ_CALIBRATION)) {
+ if (para->tpr10 & TPR10_READ_CALIBRATION) {
for (i = 0; i < 5; i++)
if (mctl_phy_read_calibration(para))
break;
@@ -820,7 +823,7 @@
}
}
- if (IS_ENABLED(CONFIG_DRAM_SUN50I_H616_READ_TRAINING)) {
+ if (para->tpr10 & TPR10_READ_TRAINING) {
for (i = 0; i < 5; i++)
if (mctl_phy_read_training(para))
break;
@@ -830,7 +833,7 @@
}
}
- if (IS_ENABLED(CONFIG_DRAM_SUN50I_H616_WRITE_TRAINING)) {
+ if (para->tpr10 & TPR10_WRITE_TRAINING) {
for (i = 0; i < 5; i++)
if (mctl_phy_write_training(para))
break;
@@ -840,8 +843,7 @@
}
}
- if (IS_ENABLED(CONFIG_DRAM_SUN50I_H616_BIT_DELAY_COMPENSATION))
- mctl_phy_bit_delay_compensation(para);
+ mctl_phy_bit_delay_compensation(para);
clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x60, 4);
@@ -1022,6 +1024,7 @@
.dx_odt = CONFIG_DRAM_SUN50I_H616_DX_ODT,
.dx_dri = CONFIG_DRAM_SUN50I_H616_DX_DRI,
.ca_dri = CONFIG_DRAM_SUN50I_H616_CA_DRI,
+ .tpr10 = CONFIG_DRAM_SUN50I_H616_TPR10,
};
unsigned long size;